Author :
Saitoh, Y. ; Akamine, T. ; Inoue, M. ; Yamanaka, J. ; Kadoi, K. ; Takano, R. ; Kojima, Y. ; Miyahara, S. ; Kamiya, M. ; Ikeda, H. ; Matsuda, T. ; Tsuboyama, T. ; Ozaki, H. ; Tanaka, M. ; Iwasaki, J. ; Haba, H. ; Higashi, Y. ; Yamada, Y. ; Okuno, S. ; Avri
Abstract :
Double-sided silicon microstrip detectors (DSSDs) with integrated coupling capacitors formed by an oxide-nitride-oxide (ONO) dielectric film were fabricated using newly developed processing techniques. We report on the processing techniques and some characteristics of the detectors fabricated in the above process
Keywords :
coupled circuits; dielectric thin films; position sensitive particle detectors; semiconductor technology; silicon radiation detectors; ONO capacitor dielectric film; Si-SiO2-Si3N4-SiO2; double-sided silicon microstrip detector; integrated coupling capacitors; oxide-nitride-oxide dielectric film; processing techniques; Capacitors; Conductivity; Decision support systems; Detectors; Dielectric films; Fabrication; Microstrip; Resistors; Silicon; Strips;
