Title :
Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric
Author :
Chang, M.F. ; Lee, P.T. ; McAlister, S.P. ; Chin, Albert
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu
Abstract :
Pentacene organic thin-film transistors (OTFTs) with a high-kappa HfLaO dielectric were integrated onto flexible polyimide substrates. The pentacene OTFTs exhibited good performance, such as a low subthreshold swing of 0.13 V/decade and a threshold voltage of -1.25 V. The field-effect mobility was 0.13 cm2/Vmiddots at an operating voltage as low as only 2.5 V. These characteristics are attractive for high-switching-speed and low-power applications.
Keywords :
hafnium compounds; high-k dielectric thin films; organic field effect transistors; thin film transistors; HfLaO; field-effect mobility; flexible polyimide substrates; gate dielectric; high-kappa dielectric; high-switching-speed application; low-power application; low-voltage flexible pentacene organic thin-film transistor; small-subthreshold-swing transistor; threshold voltage; voltage 2.5 V; Flexible; HfLaO; high-$ kappa$; organic thin-film transistors (OTFTs); pentacene;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2010416
