Title :
Characteristics of Gunn effect device on bulk n-InP
Author :
Shibayama, Akinori ; Nishimaki, Masao
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
fDate :
8/1/1977 12:00:00 AM
Abstract :
Oscillation characteristics of InP Gunn diodes were studied in a resistive circuit under pulse bias operation. Peak to valley ratio of oscillation current was observed to reach 2.85 at room temperature in planar-type diodes and it stayed constant for a change in ambient temperature from 300 to 450 K. Outside field of a matured domain was found to fall to about 3 kV/cm, which is less than one third of the threshold field.
Keywords :
Circuits; Crystals; Current measurement; Diodes; Electrodes; Electron mobility; Gunn devices; Indium phosphide; Temperature dependence; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18872
