DocumentCode :
1057432
Title :
Characteristics of the Gallium-doped infrared sensing MOSFET (IRFET)
Author :
Loh, K.W. ; Hawkins, Bobby M. ; Elabd, Hamman ; Forbes, Leonard
Author_Institution :
Westinghouse Research Laboratories, Pittsburgh, PA
Volume :
24
Issue :
8
fYear :
1977
fDate :
8/1/1977 12:00:00 AM
Firstpage :
1041
Lastpage :
1048
Abstract :
Gallium-doped infrared sensing MOSFET´s have been operated in the far infrared, 8- to 14-µm wavelength region with a quantum efficiency of 2.8 percent and a responsivity of 3.5 × 103A/J. A strong field enhancement has been observed in both thermal and optical emission of holes from the neutral gallium center in silicon. Application considerations in large-scale infrared imaging arrays are discussed.
Keywords :
Doping; Equations; Gallium compounds; Helium; Impurities; Infrared detectors; Intrusion detection; MOSFET circuits; Silicon; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18875
Filename :
1479067
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1057432
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