• DocumentCode
    1057432
  • Title

    Characteristics of the Gallium-doped infrared sensing MOSFET (IRFET)

  • Author

    Loh, K.W. ; Hawkins, Bobby M. ; Elabd, Hamman ; Forbes, Leonard

  • Author_Institution
    Westinghouse Research Laboratories, Pittsburgh, PA
  • Volume
    24
  • Issue
    8
  • fYear
    1977
  • fDate
    8/1/1977 12:00:00 AM
  • Firstpage
    1041
  • Lastpage
    1048
  • Abstract
    Gallium-doped infrared sensing MOSFET´s have been operated in the far infrared, 8- to 14-µm wavelength region with a quantum efficiency of 2.8 percent and a responsivity of 3.5 × 103A/J. A strong field enhancement has been observed in both thermal and optical emission of holes from the neutral gallium center in silicon. Application considerations in large-scale infrared imaging arrays are discussed.
  • Keywords
    Doping; Equations; Gallium compounds; Helium; Impurities; Infrared detectors; Intrusion detection; MOSFET circuits; Silicon; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18875
  • Filename
    1479067
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1057432