• DocumentCode
    105744
  • Title

    A Novel Trench-Gated Power MOSFET With Reduced Gate Charge

  • Author

    Ying Wang ; Yan-Juan Liu ; Cheng-Hao Yu ; Fei Cao

  • Author_Institution
    Coll. of Inf. & Commun. Eng., Harbin Eng. Univ., Harbin, China
  • Volume
    36
  • Issue
    2
  • fYear
    2015
  • fDate
    Feb. 2015
  • Firstpage
    165
  • Lastpage
    167
  • Abstract
    In this letter, we propose a novel trench power MOSFET structure with a p-n junction in trench to reduce the gate charge. We utilize the 2-D device simulator, ATLAS, to investigate the characteristics of the proposed structure and compare with the conventional structure. As a result, the proposed structure exhibits 49.5% enhancement in gate-charge Qg as compared with the conventional structure, without degrading the other electrical characteristics.
  • Keywords
    p-n junctions; power MOSFET; semiconductor device models; 2D device simulator; ATLAS; gate charge; novel trench power MOSFET structure; p-n junction; Doping; Junctions; Logic gates; MOSFET; Performance evaluation; Switches; Threshold voltage; Trench MOSFET; gate-charge; switching speed; trench MOSFET;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2014.2382112
  • Filename
    6994833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=105744