• DocumentCode
    1057468
  • Title

    ZnO transparent thin-film transistors with HfO2/Ta2O5 stacking gate dielectrics

  • Author

    Chen, H.J.H. ; Yeh, B.B.L. ; Pan, H.-C. ; Chen, J.-S.

  • Author_Institution
    Nat. Chi Nan Univ., Nantou
  • Volume
    44
  • Issue
    3
  • fYear
    2008
  • Firstpage
    186
  • Lastpage
    187
  • Abstract
    The performance improvement of ZnO thin-film transistors (TFTs) using HfO2/Ta2O5 stacked gate dielectrics was demonstrated. The ZnO TFTs exhibited transistor behaviour over the range 0-10 V; the field effect mobility, subthreshold slope and on/off ratio were measured to be 1.3 cm2 V-1 s-1, 0.5 V/decade and ~106, respectively.
  • Keywords
    dielectric materials; thin film transistors; HfO2-Ta2O5; ZnO; stacked gate dielectrics; stacking gate dielectrics; transparent thin-film transistor; voltage 0 V to 10 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20083215
  • Filename
    4446168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1057468