Title :
ZnO transparent thin-film transistors with HfO2/Ta2O5 stacking gate dielectrics
Author :
Chen, H.J.H. ; Yeh, B.B.L. ; Pan, H.-C. ; Chen, J.-S.
Author_Institution :
Nat. Chi Nan Univ., Nantou
Abstract :
The performance improvement of ZnO thin-film transistors (TFTs) using HfO2/Ta2O5 stacked gate dielectrics was demonstrated. The ZnO TFTs exhibited transistor behaviour over the range 0-10 V; the field effect mobility, subthreshold slope and on/off ratio were measured to be 1.3 cm2 V-1 s-1, 0.5 V/decade and ~106, respectively.
Keywords :
dielectric materials; thin film transistors; HfO2-Ta2O5; ZnO; stacked gate dielectrics; stacking gate dielectrics; transparent thin-film transistor; voltage 0 V to 10 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20083215
