DocumentCode :
1057527
Title :
First observation of thermal runaway in the radiation damaged silicon detector
Author :
Kohriki, Takashi ; Kondo, Takahiko ; Iwasaki, Hiroyuki ; Terada, Susumu ; Unno, Yoshinobu ; Ohsugi, Takashi
Author_Institution :
KEK, Nat. Lab. for High Energy Phys., Ibaraki, Japan
Volume :
43
Issue :
3
fYear :
1996
fDate :
6/1/1996 12:00:00 AM
Firstpage :
1200
Lastpage :
1202
Abstract :
A silicon microstrip detector irradiated with a fluence of 4.2×1013 protons/cm2 was demonstrated to give rise to detector thermal runaway. The temperature and voltage dependence can be fairly well reproduced by a finite element thermal simulation with temperature dependent bulk leakage current
Keywords :
leakage currents; proton effects; silicon radiation detectors; Si; Si microstrip detector; leakage current; proton irradiation; temperature dependence; thermal runaway; voltage dependence; Cooling; Leakage current; Microstrip; Neutrons; Protons; Radiation detectors; Silicon radiation detectors; Temperature dependence; Temperature sensors; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.506663
Filename :
506663
Link To Document :
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