• DocumentCode
    1057527
  • Title

    First observation of thermal runaway in the radiation damaged silicon detector

  • Author

    Kohriki, Takashi ; Kondo, Takahiko ; Iwasaki, Hiroyuki ; Terada, Susumu ; Unno, Yoshinobu ; Ohsugi, Takashi

  • Author_Institution
    KEK, Nat. Lab. for High Energy Phys., Ibaraki, Japan
  • Volume
    43
  • Issue
    3
  • fYear
    1996
  • fDate
    6/1/1996 12:00:00 AM
  • Firstpage
    1200
  • Lastpage
    1202
  • Abstract
    A silicon microstrip detector irradiated with a fluence of 4.2×1013 protons/cm2 was demonstrated to give rise to detector thermal runaway. The temperature and voltage dependence can be fairly well reproduced by a finite element thermal simulation with temperature dependent bulk leakage current
  • Keywords
    leakage currents; proton effects; silicon radiation detectors; Si; Si microstrip detector; leakage current; proton irradiation; temperature dependence; thermal runaway; voltage dependence; Cooling; Leakage current; Microstrip; Neutrons; Protons; Radiation detectors; Silicon radiation detectors; Temperature dependence; Temperature sensors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.506663
  • Filename
    506663
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1057527