Title :
Proposed new heterojunction device for infrared detection
Author :
Spratt, J.P. ; Schwarz, R.F. ; Cheng, V.M.
Author_Institution :
RCA Laboratories, Princeton, NJ
fDate :
8/1/1977 12:00:00 AM
Abstract :
A novel heterojunction diode structure is proposed in which a thin metal layer, inserted between two dissimilar semiconductors, pins the surface potential of each semiconductor with respect to a common reference level (the metal Fermi energy). The resultant structure will, in principle, permit the control of interface potential in heterojunctions.
Keywords :
Absorption; Heterojunctions; Infrared detectors; Optical devices; Optical scattering; Radiative recombination; Region 1; Region 2; Silicon; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18886
