Title :
Microgap gas chamber studies
Author :
Cho, H.S. ; Hong, W.S. ; Palaio, N. ; Kadyk, J. ; Luk, K.B. ; Perez-Mendez, V.
Author_Institution :
Dept. of Nucl. Eng., California Univ., Berkeley, CA, USA
fDate :
6/1/1996 12:00:00 AM
Abstract :
Hydrogenated amorphous silicon carbide (a-Si:C:H) has been used as an insulating support pedestal for the anode strip in microgap gas chambers (MGCs) in an attempt to make a thicker high quality insulating layer. MGCs having 2.3 or 4.6 μm thick a-Si:C:H and 2.0 μm thick SiO2 insulating layers have been built and tested. In this paper, the results of gas gains, strip damage by discharges, and preliminary aging studies are presented
Keywords :
proportional counters; SiC:H; SiO2; anode strip; high quality insulating layer; hydrogenated amorphous silicon carbide; insulating support pedestal; microgap gas chamber studies; microgap gas chambers; Aging; Amorphous silicon; Anodes; Cathodes; Conductivity; Gas insulation; Laboratories; Microstrip; Strips; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
