DocumentCode
1057599
Title
Design and operation of poly-Si analogue circuits
Author
Reita, C. ; Fluxman, S.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
141
Issue
1
fYear
1994
fDate
2/1/1994 12:00:00 AM
Firstpage
60
Lastpage
64
Abstract
The paper illustrates the use of poly-Si thin film transistors (TFTs) to fabricate analogue circuits and in particular operational amplifiers (opamps). A brief description of the peculiarities of poly-Si technology and their effects on the design of analogue circuits is given and some results obtained with low-temperature processes on two designs are discussed
Keywords
CMOS integrated circuits; MOS integrated circuits; elemental semiconductors; linear integrated circuits; operational amplifiers; silicon; thin film transistors; Si; TFT circuits; linear IC; low-temperature processes; opamps; operational amplifiers; poly-Si analogue circuits; polycrystalline Si; polysilicon; thin film transistors;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:19949950
Filename
278075
Link To Document