DocumentCode :
1057614
Title :
Improved noise performance of GaAs MESFET´s with selectively ion-implanted n+source regions
Author :
Ohata, Keiichi ; Nozaki, Tadatoshi ; Kawamura, Nobuo
Author_Institution :
Nippon Electric Company, Ltd., Kawasaki, Japan
Volume :
24
Issue :
8
fYear :
1977
fDate :
8/1/1977 12:00:00 AM
Firstpage :
1129
Lastpage :
1130
Abstract :
Superior microwave performance of 0.5-µm-gate GaAs MESFET´s has been attained by a structure with selectively ion-implanted n+source regions. The source series resistance is reduced and the noise figure of 2.1 dB is observed at 12 GHz.
Keywords :
Aluminum; Annealing; Contact resistance; Electrodes; Fabrication; Gallium arsenide; MESFETs; Microwave devices; Noise figure; Surface treatment;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18892
Filename :
1479084
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1057614
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