Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells

Author

Phu Minh Lam ; Jiang Wu ; Hatch, Sabina ; Dongyoung Kim ; Mingchu Tang ; Huiyun Liu ; Wilson, James ; Allison, Rebecca

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK

Volume

9

Issue

2

fYear

2015

fDate

4 2015

Firstpage

65

Lastpage

68

Abstract

The effect of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) is studied. A significant improvement in photoemission, photocurrent density and spectral response was observed with post-growth annealing. The optimal anneal temperature was found to be 700°C, which lead to an 18% improvement in current density from 4.9 mA cm^-2 for as-grown sample to 5.8 mA cm^-2. We assign this enhanced performance to the reduced density of inherent point defects that was formed at the quantum dot (QD) and GaAs barrier. Post-growth thermal annealing of QDSCs is demonstrated as a simple route for achieving improved device performance.

Keywords

III-V semiconductors; current density; indium compounds; photoemission; point defects; rapid thermal annealing; semiconductor quantum dots; solar cells; InAs-GaAs; QDSC; current density; optimal anneal temperature; photocurrent density; photoemission; point defects; post-growth thermal annealing; quantum dot solar cells; rapid thermal annealing; spectral response; temperature 700 degC;

fLanguage

English

Journal_Title

Optoelectronics, IET

Publisher

iet

ISSN

1751-8768

Type

jour

DOI

10.1049/iet-opt.2014.0079

Filename

7062092