Title :
Selective lift-off for preferential growth with molecular beam epitaxy
Author :
Cho, A.Y. ; DiLorenzo, J.V. ; Mahoney, G.E.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
fDate :
9/1/1977 12:00:00 AM
Abstract :
Semiconducting material consisting of inlays of different doping or composition in selective areas may be grown by molecular beam epitaxy (MBE). The growth morphology showed that it is possible to fill an etched hole with MBE without the formation of voids resulting from facet growth as observed in other growth techniques. This regrowth process may have potential for applications to integrated microwave and optoelectric devices.
Keywords :
Crystallization; Epitaxial growth; Etching; FETs; Gallium arsenide; Hafnium; Microwave devices; Molecular beam epitaxial growth; Plasma temperature; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18904
