Title :
Injection-Type GaInAsP–InP–Si Distributed-Feedback Laser Directly Bonded on Silicon-on-Insulator Substrate
Author :
Okumura, Tadashi ; Maruyama, Takeo ; Yonezawa, Hidenori ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Quantum Nanoelec- tronics Res. Center, Tokyo Inst. of Technol., Tokyo
fDate :
3/1/2009 12:00:00 AM
Abstract :
An injection-type distributed-feedback laser, with wirelike active regions, directly bonded on a silicon-on-insulator substrate, was realized. A low threshold current Ith of 104 mA was obtained at a stripe width of 25 mum and a cavity length of 1 mm. A sidemode suppression ratio of 28 dB was obtained at 1.3 Ith.
Keywords :
III-V semiconductors; bonding processes; distributed feedback lasers; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser beams; laser cavity resonators; optical fabrication; semiconductor lasers; silicon; silicon-on-insulator; GaInAsP-InP-Si; Si-SiO2; current 104 mA; direct bonding process; distributed-feedback laser; injection-type DFB laser; laser cavity length; sidemode suppression ratio; silicon-on-insulator substrate; size 1 mm; wirelike active regions; Direct wafer bonding; injection-type distributed-feedback (DFB) laser; photonic integrated circuit (PIC); silicon-on-insulator (SOI); wirelike active region;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.2010780
