Title :
Interdigitated terahertz emitters
Author :
Acuna, G.P. ; Buersgens, F.F. ; Lang, C. ; Handloser, M. ; Guggenmos, A. ; Kersting, R.
Author_Institution :
Univ. of Munich, Munich
Abstract :
A large aperture terahertz (THz) emitter is presented. The planar photoconducting GaAs device consists of a periodical interdigitated Schottky structure. Additional trenches in the GaAs have double periodicity. They are required for far-field THz emission. Terahertz field strengths of 15 V/cm were achieved.
Keywords :
III-V semiconductors; Schottky diodes; gallium arsenide; photoconducting devices; GaAs; interdigitated terahertz emitters; large aperture terahertz emitter; periodical interdigitated Schottky structure; planar photoconducting device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082905
