DocumentCode
1057806
Title
First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate
Author
Hoel, V. ; Defrance, N. ; De Jaeger, J.C. ; Gerard, H. ; Gaquiere, C. ; Lahreche, H. ; Langer, R. ; Wilk, A. ; Lijadi, M. ; Delage, S.
Author_Institution
USTL, Villeneuve dAscq
Volume
44
Issue
3
fYear
2008
Firstpage
238
Lastpage
239
Abstract
The first results obtained from AlGaN/GaN HEMT devices on MBE epitaxial structures grown on ´composite´ substrates are presented. These substrates are based on innovative structures in which a thin Si single crystal layer is transferred on top of a thick polycrystalline SiC wafer. The fabrication of the transistors is based on a process flow close to those used on epitaxy on Si bulk substrates. The results show the capabilities of such composite devices, providing HEMT devices for microwave power applications.
Keywords
III-V semiconductors; aluminium compounds; composite materials; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; wide band gap semiconductors; AlGaN-GaN; HEMT devices; MBE epitaxial structures; bulk substrates; composite devices; composite substrate; microwave power applications; molecular beam epitaxy; thick polycrystalline wafer; transistor fabrication;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20083258
Filename
4446202
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