Author :
Hoel, V. ; Defrance, N. ; De Jaeger, J.C. ; Gerard, H. ; Gaquiere, C. ; Lahreche, H. ; Langer, R. ; Wilk, A. ; Lijadi, M. ; Delage, S.
Abstract :
The first results obtained from AlGaN/GaN HEMT devices on MBE epitaxial structures grown on ´composite´ substrates are presented. These substrates are based on innovative structures in which a thin Si single crystal layer is transferred on top of a thick polycrystalline SiC wafer. The fabrication of the transistors is based on a process flow close to those used on epitaxy on Si bulk substrates. The results show the capabilities of such composite devices, providing HEMT devices for microwave power applications.
Keywords :
III-V semiconductors; aluminium compounds; composite materials; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; wide band gap semiconductors; AlGaN-GaN; HEMT devices; MBE epitaxial structures; bulk substrates; composite devices; composite substrate; microwave power applications; molecular beam epitaxy; thick polycrystalline wafer; transistor fabrication;
