Title :
High mobility strained Ge PMOFETs with high-k gate dielectric and metal gate on Si substrate
Author :
Donnelly, J.P. ; Kelly, D.Q. ; Garcia-Gutierrez, D.I. ; José-Yacamán, M. ; Banerjee, S.K.
Author_Institution :
Univ. of Texas at Austin, Austin
Abstract :
A thin (~20 nm) compressively-strained selective epitaxially grown Ge film was grown on small Si active areas by ultra-high vacuum-chemical vapour deposition. The Ge PMOSFETs with HfO2 gate dielectric show a ~2 x drive current enhancement and greater than 2 x improvement in hole mobility compared to control Si PMOSFETs.
Keywords :
MOSFET; dielectric properties; germanium; silicon; Ge PMOSFET; Ge film; HfO2 gate dielectric; Si substrate; high mobility; high-kappa gate dielectric; metal gate; ultra-high vacuum-chemical vapour deposition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082558
