DocumentCode

1057831

Title

IIa-3 planar P-N junctions in InSb by Be ion implantation

Author

Thom, R.D.

Volume

24

Issue

9

fYear

1977

fDate

9/1/1977 12:00:00 AM

Firstpage

1193

Lastpage

1194

Keywords

Charge coupled devices; Current density; Diodes; Fabrication; Ice; Ion implantation; Laboratories; MOSFETs; P-n junctions; Virtual reality;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1977.18915

Filename

1479107