DocumentCode
1057834
Title
InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer
Author
Lew, K.L. ; Yoon, S.F. ; Tanoto, H. ; Chen, K.P. ; Dohrman, C.L. ; Isaacson, D.M. ; Fitzgerald, E.A.
Author_Institution
Nanyang Technol. Univ., Singapore
Volume
44
Issue
3
fYear
2008
Firstpage
243
Lastpage
244
Abstract
What is believed to be the first InGaP/GaAs heterojunction bipolar transistor grown on SiGe/Si substrate is reported. The collector-emitter offset voltage and the knee voltage of the device are ~150 mV and <1 V, respectively. The maximum gain of the device is ~25 at collector current of ~100 mA. The collector and base ideality factor are ~1.01 and ~1.4, respectively. These results show the good potential for integrating the InGaP/GaAs heterojunction bipolar transistor on Si substrate using the compositionally graded SiGe buffer layer approach.
Keywords
III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; silicon compounds; substrates; InGaP/GaAs heterojunction bipolar transistor; SiGe buffer layer; SiGe graded buffer layer; SiGe/Si substrate; collector-emitter offset voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20083328
Filename
4446205
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