DocumentCode
1057841
Title
Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface
Author
Lee, Chia-En ; Lai, Chun-Feng ; Lee, Yea-Chen ; Kuo, Hao-Chung ; Lu, Tien-Chang ; Wang, Shing-Chung
Author_Institution
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu
Volume
21
Issue
5
fYear
2009
fDate
3/1/2009 12:00:00 AM
Firstpage
331
Lastpage
333
Abstract
In this letter, the nitride-based thin-film light-emitting diodes (TFLEDs) with eight-fold photonic quasi-crystal (PQC) surfaces are proposed and demonstrated by a combination of wafer bonding, laser lift-off, and electron-beam lithography processes. By adopting a PQC surface, the light-output power (at 350 mA) of the PQC-TFLEDs exhibits 140% output power enhancement as compared with that of TFLEDs without a PQC surface.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; photonic crystals; thin film devices; wide band gap semiconductors; GaN; current 350 mA; electron beam lithography; photonic quasicrystal surface; thin film light emitting diodes; wafer bonding; Electron-beam lithography; laser lift-off (LLO); photonic quasi-crystal (PQC); thin-film light-emitting diodes (TFLEDs); wafer bonding;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2008.2010953
Filename
4738380
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