Optically controlled characteristics of an ion-implanted hetero-MIS capacitor

Author

Chakrabarti, P. ; Chandra, A. ; Gupta, V. ; Shah, H.S. ; Kumar, Y. Ravi

Author_Institution

Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India

Volume

141

Issue

1

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

27

Lastpage

32

Abstract

The paper introduces an InGaAs/InP:Fe hetero-MIS structure which can be used as an optically controlled capacitor. A numerical model of the device has been developed to investigate the effect of illumination on the characteristics of the device. To generalise the model, the semiconductor has been assumed to be nonuniformly doped. The model takes into account the effects of the surface states and change in time constant of the minority carriers (electrons in this case) due to illumination. It has been found that the capacitance of the proposed structure can be precisely controlled by the incident optical power. The capacitor is expected to find useful applications in solid-state imaging and optical tuning. The model developed here can be used as a basic tool for analysing similar hetero-MIS structures with arbitrary doping profiles

Keywords

capacitance; gallium arsenide; indium compounds; ion implantation; iron; metal-insulator-semiconductor structures; minority carriers; photoelectric devices; semiconductor device models; InGaAs-InP:Fe; InGaAs/InP:Fe; arbitrary doping profiles; capacitance; electrons; hetero-MIS capacitor; hetero-MIS structure; hetero-MIS structures; illumination; incident optical power; ion-implanted; minority carriers; nonuniformly doped; numerical model; optical tuning; optically controlled capacitor; optically controlled characteristics; solid-state imaging; surface states; time constant;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19949692

Filename

278113