DocumentCode :
1057883
Title :
IIa-8 properties of gallium-, aluminum-, and indium-doped silicon as extrinsic detector materials
Author :
Baron, R. ; Young ; Baukus, James P. ; Marsh, O.J.
Volume :
24
Issue :
9
fYear :
1977
fDate :
9/1/1977 12:00:00 AM
Firstpage :
1195
Lastpage :
1195
Keywords :
Chemical lasers; Chemical vapor deposition; Detectors; Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Production; Sheet materials; Silicon; Temperature measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18919
Filename :
1479111
Link To Document :
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