Title :
IIa-8 properties of gallium-, aluminum-, and indium-doped silicon as extrinsic detector materials
Author :
Baron, R. ; Young ; Baukus, James P. ; Marsh, O.J.
fDate :
9/1/1977 12:00:00 AM
Keywords :
Chemical lasers; Chemical vapor deposition; Detectors; Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Production; Sheet materials; Silicon; Temperature measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18919
