DocumentCode :
1057899
Title :
IIa-9 room-temperature operation of Ga(1-x)AlxAs/GaAs double heterostructure lasers grown by metalorganic chemical vapor deposition (late paper)
Author :
Dupuis, Russell ; Dapkus, P.D.
Volume :
24
Issue :
9
fYear :
1977
fDate :
9/1/1977 12:00:00 AM
Firstpage :
1195
Lastpage :
1196
Keywords :
Chemical lasers; Chemical vapor deposition; DH-HEMTs; Doping; Gallium arsenide; Molecular beam epitaxial growth; Optical materials; Optical pulses; Production; Pulsed laser deposition;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18921
Filename :
1479113
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1057899
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