DocumentCode :
105801
Title :
Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias
Author :
Wei Feng ; Chun Meng Dou ; Niwa, Masaaki ; Yamada, Koji ; Ohmori, Kenji
Author_Institution :
Grad. Sch. of Pure & Appl. Sci., Univ. of Tsukuba, Tsukuba, Japan
Volume :
35
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
3
Lastpage :
5
Abstract :
The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (Vg) cycle was investigated. We have revealed for the first time that the existence of RTN increases Id fluctuations under dynamic Vg by making a comparison between FETs with and without RTN. The initial trap occupation states before varying Vg, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of Vg. The revealed effects of RTN with different profiles on Id under dynamic Vg will be useful for designing ultrahigh speed circuits.
Keywords :
MOSFET; random noise; semiconductor device noise; MOSFETs; RTN profiles; drain-current fluctuation; dynamic gate bias; pulsed gate voltage cycle; random telegraph noise profiles; trap occupation states; ultrahigh speed circuit design; Electron traps; Histograms; Logic gates; MOSFET; Noise; Periodic structures; MOSFETs; dynamic gate bias; random telegraph noise;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2288981
Filename :
6672013
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=105801
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