Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

Author

Wei Feng ; Chun Meng Dou ; Niwa, Masaaki ; Yamada, Koji ; Ohmori, Kenji

Author_Institution

Grad. Sch. of Pure & Appl. Sci., Univ. of Tsukuba, Tsukuba, Japan

Volume

35

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

3

Lastpage

5

Abstract

The influence of random telegraph noise (RTN) in MOSFETs on drain current (I_d) during the rise/fall edges of the pulsed gate voltage (V_g) cycle was investigated. We have revealed for the first time that the existence of RTN increases I_d fluctuations under dynamic V_g by making a comparison between FETs with and without RTN. The initial trap occupation states before varying V_g, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of V_g. The revealed effects of RTN with different profiles on I_d under dynamic V_g will be useful for designing ultrahigh speed circuits.

Keywords

MOSFET; random noise; semiconductor device noise; MOSFETs; RTN profiles; drain-current fluctuation; dynamic gate bias; pulsed gate voltage cycle; random telegraph noise profiles; trap occupation states; ultrahigh speed circuit design; Electron traps; Histograms; Logic gates; MOSFET; Noise; Periodic structures; MOSFETs; dynamic gate bias; random telegraph noise;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2288981

Filename

6672013