Title :
IIIb-7 isolation and n-type conduction from implantation in InP
Author :
Davies, D.E. ; Lorenzo, J.P.
fDate :
9/1/1977 12:00:00 AM
Keywords :
Annealing; Conductivity; Diodes; Gallium arsenide; Implants; Indium phosphide; Isolation technology; P-n junctions; Silicon; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18947
