Title :
IIIb-8 highly reliable 10 W and 30% P-N junction GaAs Read diode
Author :
Nishitani, Kenji ; Sawano, Hisaya ; Ishii, Takuro ; Mitsui, S.
fDate :
9/1/1977 12:00:00 AM
Keywords :
Annealing; Conductivity; Gallium arsenide; Implants; Indium phosphide; Life testing; P-n junctions; Radio frequency; Schottky diodes; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18948
