DocumentCode

1058257

Title

IVa-8 models for current runaway in thin insulators by impact ionization

Author

Kashat, I. ; Klein, N.

Volume

24

Issue

9

fYear

1977

fDate

9/1/1977 12:00:00 AM

Firstpage

1208

Lastpage

1209

Keywords

Delay; Electric breakdown; FETs; Gallium arsenide; Impact ionization; Insulation; Logic gates; Radiative recombination; Semiconductor device breakdown; Switches;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1977.18956

Filename

1479148