• DocumentCode
    1058267
  • Title

    IVb-3 low power depletion mode ion-implanted GaAs FET integrated circuits

  • Author

    Eden, R.C. ; Welch, B.M.

  • Volume
    24
  • Issue
    9
  • fYear
    1977
  • fDate
    9/1/1977 12:00:00 AM
  • Firstpage
    1209
  • Lastpage
    1210
  • Keywords
    Digital integrated circuits; FET integrated circuits; Fabrication; Gallium arsenide; Integrated circuit technology; Inverters; Ion implantation; Large scale integration; MESFETs; Power dissipation;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18957
  • Filename
    1479149
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1058267