A monolithic GaAs receiver for optical interconnect systems

Author

Choi, Joongho ; Sheu, Bing J. ; Chen, Oscal T -C

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

Volume

29

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

328

Lastpage

331

Abstract

A monolithic GaAs optical receiver which includes a photodetector and preamplifier was designed and fabricated using a common 1.0-μm GaAs MESFET technology. The optical receiver operates at the data rate of 1 Gb/s. The transimpedance value can be continuously tuned from 1 to 10 kΩ. The metal-semiconductor-metal photodiode shows a 35% efficiency. Several design factors are considered to achieve high-bandwidth and low-noise operation. An array of the integrated receivers can be compactly implemented in a single chip for high-speed interconnection networks and photonic signal processing

Keywords

III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical information processing; optical interconnections; optical receivers; photodetectors; photodiodes; 1 Gbit/s; 1 micron; 35 percent; GaAs; MESFET technology; MSM photodiode; high-bandwidth; high-speed interconnection networks; integrated receiver arrays; low-noise operation; metal-semiconductor-metal photodiode; monolithic GaAs receiver; optical interconnect systems; optical receiver; photodetector; photonic signal processing; preamplifier; transimpedance value; Array signal processing; Gallium arsenide; MESFETs; Multiprocessor interconnection networks; Optical design; Optical interconnections; Optical receivers; Photodetectors; Photodiodes; Preamplifiers;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.278357

Filename

278357