• DocumentCode
    1058319
  • Title

    Design techniques for low-voltage high-speed digital bipolar circuits

  • Author

    Razavi, Behzad ; Ota, Yusuke ; Swartz, Robert G.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    29
  • Issue
    3
  • fYear
    1994
  • fDate
    3/1/1994 12:00:00 AM
  • Firstpage
    332
  • Lastpage
    339
  • Abstract
    This paper describes design techniques for multigigahertz digital bipolar circuits with supply voltages as low as 1.5 V. Examples include a 2/1 multiplexer operating at 1 Gb/s with 1.2 mW power dissipation, a D-latch achieving a maximum speed of 2.2 GHz while dissipating 1.4 mW, two exclusive-OR gates with a delay less than 200 ps and power dissipation of 1.3 mW, and a buffer/level shifter having a delay of 165 ps while dissipating 1.4 mW. The prototypes have been fabricated in a 1.5-μm 12-GHz bipolar technology. Simulations on benchmarks such as frequency dividers and line drivers indicate that, for a 1.5-V supply, the proposed circuits achieve higher speed than their CMOS counterparts designed in a 0.5-μm CMOS process with zero threshold voltage
  • Keywords
    bipolar integrated circuits; buffer circuits; digital integrated circuits; driver circuits; frequency dividers; integrated logic circuits; logic design; logic gates; multiplexing equipment; 1 Gbit/s; 1.2 to 1.4 mW; 1.5 V; 1.5 micron; 12 GHz; 165 ps; 2.2 GHz; 200 ps; D-latch; buffer/level shifter; design techniques; digital bipolar circuits; exclusive-OR gates; frequency dividers; high-speed operation; line drivers; low-voltage circuits; multigigahertz type; multiplexer; CMOS process; CMOS technology; Circuit simulation; Delay; Driver circuits; Frequency conversion; Low voltage; Multiplexing; Power dissipation; Prototypes;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.278358
  • Filename
    278358