Title :
Schottky merged BiCMOS structures
Author :
Rofail, Samir S. ; Elmasry, Mohamed I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
3/1/1994 12:00:00 AM
Abstract :
A new merged BiCMOS structure is presented. It incorporates a Schottky diode between the base and the collector of the n-p-n bipolar transistor. The structure offers the same reduced area advantage of merged over conventional BiCMOS, and is shown to have granted latchup immunity to BiCMOS circuits. The device simulations using HSPICE verify the latchup immunity
Keywords :
BiCMOS integrated circuits; SPICE; Schottky-barrier diodes; circuit analysis computing; circuit reliability; integrated circuit technology; HSPICE; Schottky diode; Schottky merged BiCMOS structures; device simulations; latchup immunity; n-p-n bipolar transistor; BiCMOS integrated circuits; Bipolar transistors; CMOS process; Circuit simulation; MOSFETs; Noise measurement; Schottky diodes; Turning; Very large scale integration; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
