Title :
VI-3 nonradiative "Large dark spots" in AlxGa1-xAs-GaAs heterostructures
Author :
Henry, C.H. ; Logan, R.A.
fDate :
9/1/1977 12:00:00 AM
Keywords :
Accelerated aging; Capacitive sensors; Degradation; Electron devices; Gallium arsenide; Interface states; Lighting; Optical films; P-n junctions; Photoluminescence;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18973
