• DocumentCode
    1058602
  • Title

    A modification of the Gummel—Poon charge-control equations

  • Author

    Vaughan, R. ; Getreu, I.E. ; Kwok, C.Y.

  • Author_Institution
    University of New South Wales, Sydney, Australia
  • Volume
    24
  • Issue
    10
  • fYear
    1977
  • fDate
    10/1/1977 12:00:00 AM
  • Firstpage
    1259
  • Lastpage
    1261
  • Abstract
    The incorporation of the effect of basewidth modulation on the base transit time in the dc Gummel-Poon charge-control equations results in the modeling of basewidth modulation and high-level injection effects by separate factors.
  • Keywords
    Bipolar transistors; Cutoff frequency; Difference equations; Doping; Electron devices; Kirk field collapse effect; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18990
  • Filename
    1479182