DocumentCode
1058602
Title
A modification of the Gummel—Poon charge-control equations
Author
Vaughan, R. ; Getreu, I.E. ; Kwok, C.Y.
Author_Institution
University of New South Wales, Sydney, Australia
Volume
24
Issue
10
fYear
1977
fDate
10/1/1977 12:00:00 AM
Firstpage
1259
Lastpage
1261
Abstract
The incorporation of the effect of basewidth modulation on the base transit time in the dc Gummel-Poon charge-control equations results in the modeling of basewidth modulation and high-level injection effects by separate factors.
Keywords
Bipolar transistors; Cutoff frequency; Difference equations; Doping; Electron devices; Kirk field collapse effect; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18990
Filename
1479182
Link To Document