DocumentCode :
1058612
Title :
Design considerations for exponentially retrograded silicon hyperabrupt varactors
Author :
Tyagi, M.S. ; Gupta, A.K.
Author_Institution :
Indian Institute of Technology, Kanpur, India
Volume :
24
Issue :
10
fYear :
1977
fDate :
10/1/1977 12:00:00 AM
Firstpage :
1261
Lastpage :
1263
Abstract :
Avalanche breakdown voltage VB , space-charge width at breakdown WB , and 
index 
of exponentially retrograded silicon hyperabrupt p+-n junctions have been calculated for various impurity distributions. Empirical relations are obtained expressing WB , VB , and the maximum value of in terms of impurity profile parameters of the retrograded region. Applications of these relations in the design of hyperabrupt varactors is indicated.
index of exponentially retrograded silicon hyperabrupt p+-n junctions have been calculated for various impurity distributions. Empirical relations are obtained expressing W in terms of impurity profile parameters of the retrograded region. Applications of these relations in the design of hyperabrupt varactors is indicated.Keywords :
Avalanche breakdown; Bipolar transistors; Breakdown voltage; Capacitance-voltage characteristics; Equations; Impurities; Integrated circuit modeling; Predictive models; Silicon; Varactors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18991
Filename :
1479183
Link To Document :
