Title :
Dependence of thin film transistor characteristics on the deposition conditions of silicon nitride and amorphous silicon
Author :
Miyashita, Haruzo ; Watabe, Yoshimi
Author_Institution :
ANELVA Corp., Tokyo, Japan
fDate :
4/1/1994 12:00:00 AM
Abstract :
The systematic relation between thin film transistors´ (TFT´s) characteristics and the deposition conditions of amorphous silicon nitride (a-SiN) films and hydrogenated amorphous silicon (a-Si:H) films is investigated. It is observed that field effect mobility μFE and threshold voltage Vth of the TFT´s strongly depend on the deposition conditions of these films. The maximum μFE of 0.88 cm2/V·s is obtained for the TFT of which a-SiN film is deposited at a pressure of 85 Pa. This phenomenon is due to the variation of the interface states density between a-Si:H film and a-SiN film
Keywords :
amorphous semiconductors; amorphous state; carrier mobility; elemental semiconductors; hydrogen; insulated gate field effect transistors; insulating thin films; interface electron states; plasma CVD; plasma CVD coatings; semiconductor growth; semiconductor thin films; semiconductor-insulator boundaries; silicon; silicon compounds; thin film transistors; 85 Pa; Al-Si:H-Si:N-Cr-Si; PECVD; TFT characteristics; a-Si:H films; a-SiN films; amorphous SiN; deposition conditions; field effect mobility; hydrogenated amorphous Si films; interface states density; thin film transistor; threshold voltage; Amorphous silicon; Computer displays; Electrodes; Fabrication; Iron; Liquid crystal displays; Plasma temperature; Semiconductor films; Substrates; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
