Title :
Electrical characteristics of rapid thermal nitrided-oxide gate n and p-MOSFET´s with less than 1 atom% nitrogen concentration
Author :
Momose, Hisayo ; Morimoto, Toyota ; Ozawa, Yoshio ; Yamabe, Kikuo ; Iwai, Hiroshi
Author_Institution :
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
fDate :
4/1/1994 12:00:00 AM
Abstract :
The characteristics and reliability of nitrided-oxide gate n- and p-MOSFET´s with less than 1 atom% nitrogen concentration in the gate films were investigated in detail. These very light nitridations were accomplished using NH3 gas at low temperatures-from 800° C to 900° C. Nitrogen concentrations as low as 0.13 atom% were successfully measured by SIMS and AES. The region of optimum nitrogen concentration for deep-submicron devices is discussed. We explain how good drivability and good hot-carrier reliability were attained simultaneously with a nitrogen concentration of around 0.5 atom%, which is equivalent to that of oxynitride gate MOSFETs using N2O gas. The suppression of boron penetration is also discussed. Light nitridation by ammonia gas is particularly desirable for deep-submicron processes because it can be accomplished at a relatively low temperature of about 900°C
Keywords :
doping profiles; hot carriers; insulated gate field effect transistors; interface electron states; nitridation; oxidation; rapid thermal processing; reliability; semiconductor device testing; 800 to 900 C; AES; B penetration suppression; NH3; NH3 gas; SIMS; Si-SiON; deep-submicron devices; drivability; dual gate CMOS transistors; electrical characteristics; hot-carrier reliability; interface state density; nMOSFET; optimum N concentration; pMOSFET; rapid thermal nitridation; rapid thermal oxidation; reliability; transconductance; Atomic measurements; Boron; Electric variables; Hot carriers; Hydrogen; Interface states; MOSFET circuits; Nitrogen; Rapid thermal processing; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
