DocumentCode
1058781
Title
X-Band high burnout resistance Schottky-barrier diodes
Author
Anand, Yoginder
Author_Institution
Microwave Associates, Inc., Burlington, MA
Volume
24
Issue
12
fYear
1977
fDate
12/1/1977 12:00:00 AM
Firstpage
1330
Lastpage
1336
Abstract
An investigation of high burnout resistant Schottky-barrier diodes for 
-band frequencies is presented. These diodes exhibit pulse RF burnout capability greater than 100 W (τ = 3 ns, 103pulses/s) and CW burnout capability of 5 W, which is a two to five times better performance than most Schottky-barrier diodes manufactured today. The diodes also exhibit nearly ideal electrical characteristics and low noise figures. The failure analysis of these devices under CW power and pulsed RF power (τ ≃ 3 ns) is also discussed.
-band frequencies is presented. These diodes exhibit pulse RF burnout capability greater than 100 W (τ = 3 ns, 103pulses/s) and CW burnout capability of 5 W, which is a two to five times better performance than most Schottky-barrier diodes manufactured today. The diodes also exhibit nearly ideal electrical characteristics and low noise figures. The failure analysis of these devices under CW power and pulsed RF power (τ ≃ 3 ns) is also discussed.Keywords
Detectors; Failure analysis; Noise figure; P-i-n diodes; Protection; Radar antennas; Radio frequency; Schottky diodes; Semiconductor diodes; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.19008
Filename
1479200
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