A new linear sweep technique to measure generation lifetimes in thin-film SOI MOSFET´s

Author

Venkatesan, S. ; Pierret, R.F. ; Neudeck, G.W.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

41

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

567

Lastpage

574

Abstract

A new linear sweep technique to measure generation lifetimes (τ_g) in silicon-on-insulator (SOI) material is presented. A detailed analytic formulation is applied to fully-depleted and partially-depleted SOI films and used to simulate the behavior of the SOI devices under linear sweep conditions. A novel algorithm accurately determines the effective generation width in fully depleted SOI films. The measurement technique is experimentally verified by applying the algorithm to fully depleted SIMOX P-channel MOSFET´s where observed lifetimes ranged from 0.3 μs to 2.4 μs

Keywords

SIMOX; carrier lifetime; electric variables measurement; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; 0.3 to 2.4 mus; analytic formulation; effective generation width; fully depleted SIMOX P-channel MOSFET; generation lifetime measurement; linear sweep technique; partially-depleted SOI films; simulation; thin-film SOI MOSFET; Capacitance measurement; Isolation technology; MOSFET circuits; Measurement techniques; P-n junctions; Pulse measurements; Semiconductor materials; Silicon on insulator technology; Thickness measurement; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.278511

Filename

278511