Title :
Monte Carlo simulation of noise in GaAs semiconductor devices
Author :
Adams, John G. ; Tang, Ting-wei ; Kay, Leonard E.
Author_Institution :
Dept. of Eng. & Public Policy, Carnegie Mellon Univ., Pittsburgh, PA, USA
fDate :
4/1/1994 12:00:00 AM
Abstract :
The Monte Carlo method has been used to calculate the noise in GaAs resistors where finite-size effects are important, being from 0.5 to 1.5 μm in length. The results agree qualitatively with experimental noise measurements performed on similar devices. Monte Carlo noise calculations have also been conducted for Schottky barrier diodes. A method for conducting full-device Monte Carlo simulations of these diodes has been employed. Schottky barrier diodes with both 0.12 and 1.0 μm epitaxial layers were modeled, and the calculated noise is in agreement with experiment throughout a wide range of bias voltages, both when shot noise and when excess noise predominate. Two different methods of calculating the noise current have been compared
Keywords :
III-V semiconductors; Monte Carlo methods; Schottky-barrier diodes; gallium arsenide; random noise; resistors; semiconductor device models; semiconductor device noise; size effect; 0.12 mum; 0.5 to 1.5 mum; 1 mum; GaAs; GaAs resistors; Monte Carlo simulation; Schottky barrier diodes; bias voltages; excess noise; finite-size effects; model; noise calculation; noise current; shot noise; Acoustical engineering; Gallium arsenide; Noise measurement; Performance evaluation; Resistors; Schottky barriers; Schottky diodes; Semiconductor device noise; Semiconductor devices; Semiconductor diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
