Monte Carlo simulation of noise in GaAs semiconductor devices

Author

Adams, John G. ; Tang, Ting-wei ; Kay, Leonard E.

Author_Institution

Dept. of Eng. & Public Policy, Carnegie Mellon Univ., Pittsburgh, PA, USA

Volume

41

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

575

Lastpage

581

Abstract

The Monte Carlo method has been used to calculate the noise in GaAs resistors where finite-size effects are important, being from 0.5 to 1.5 μm in length. The results agree qualitatively with experimental noise measurements performed on similar devices. Monte Carlo noise calculations have also been conducted for Schottky barrier diodes. A method for conducting full-device Monte Carlo simulations of these diodes has been employed. Schottky barrier diodes with both 0.12 and 1.0 μm epitaxial layers were modeled, and the calculated noise is in agreement with experiment throughout a wide range of bias voltages, both when shot noise and when excess noise predominate. Two different methods of calculating the noise current have been compared

Keywords

III-V semiconductors; Monte Carlo methods; Schottky-barrier diodes; gallium arsenide; random noise; resistors; semiconductor device models; semiconductor device noise; size effect; 0.12 mum; 0.5 to 1.5 mum; 1 mum; GaAs; GaAs resistors; Monte Carlo simulation; Schottky barrier diodes; bias voltages; excess noise; finite-size effects; model; noise calculation; noise current; shot noise; Acoustical engineering; Gallium arsenide; Noise measurement; Performance evaluation; Resistors; Schottky barriers; Schottky diodes; Semiconductor device noise; Semiconductor devices; Semiconductor diodes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.278512

Filename

278512