• DocumentCode
    1058799
  • Title

    Excess noise in semiconducting BaSrTiO3

  • Author

    Agarwal, Rajendra P. ; Ambrózy, András ; Hartnagel, Hans L.

  • Author_Institution
    University of Newcastle upon Tyne, Newcastle upon Tyne, England
  • Volume
    24
  • Issue
    12
  • fYear
    1977
  • fDate
    12/1/1977 12:00:00 AM
  • Firstpage
    1337
  • Lastpage
    1341
  • Abstract
    The noise characteristics of semiconducting BaSrTiO3were investigated as a function of frequency, bias current, and volume of the sample. It was found that the noise is approximately inversely proportional to the volume of the sample and the frequency dependence is a 1/f behavior. This and other results have implications regarding an optimized use of this material for temperature-sensing applications.
  • Keywords
    Background noise; Bolometers; Fluctuations; Infrared detectors; Semiconductivity; Semiconductor device noise; Semiconductor materials; Thermal conductivity; Voltage; Working environment noise;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.19009
  • Filename
    1479201
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1058799