On the characteristic of the deep-depletion SOS transistor

An improved characterization of the conduction properties of deep-depletion SOS transistor is presented. The new model provides a continuous characterization of film conduction from strong accumulation to strong depletion. A comparison is made between the simple quadratic model and the new model. It is shown that the finite electrostatic surface potential of a strongly accumulated layer can be represented as a slight threshold shift in the quadratic model. Conduction characteristics for weak accumulation, which has never been studied before, is also compared with the characteristics of the quadratic model. The new model is also used to generate characteristic curves that closely match empirical characteristic curves.