A detailed investigation of heterojunction transport using a rigorous solution to the Boltzmann equation

A detailed study of electron transport across an Np⁺ heterojunction diode is performed using a rigorous numerical solution to the Boltzmann equation. Results are presented for the I-V characteristic and the average electron energy, temperature, energy flux, and quasi-Fermi levels as a function of position. Comparison with a simple analytical treatment shows good agreement for the current and quasi-Fermi level splitting versus bias. The distribution functions near the heterojunction interface are also investigated and found to be distinctly non-Maxwellian. Finally, the results are used to examine the boundary conditions of hydrodynamic quantities at the heterojunction