Improvement of hot-carrier and radiation hardnesses in metal-oxide-nitride-oxide semiconductor devices by irradiation-then-anneal treatments

Author

Chang-Liao, Kuei-Shu ; Hwu, Jenn-Gwo

Author_Institution

Dept. of Nucl. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

41

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

612

Lastpage

614

Abstract

The hardnesses of hot-carrier and radiation of metal-oxide nitride-oxide semiconductor (MONOS) devices can be improved by the irradiation-then-anneal (ITA) treatments. Each treatment includes an irradiation of Co-60 with a total dose of 1M rads(SiO₂) and an anneal in N₂ at 400°C for 10 min successively. This improvement can be explained by the release of SiO₂/Si interfacial strain

Keywords

annealing; gamma-ray effects; hot carriers; interface electron states; metal-insulator-semiconductor devices; radiation hardening (electronics); reliability; 1 Mrad; 10 min; 400 C; C-V curves; Co-60 irradiation; MONOS devices; N₂; N₂ annealing; SiO₂-Si; SiO₂/Si interfacial strain release; hot-carrier hardness; interface trap density; irradiation-then-anneal treatment; metal-oxide-nitride-oxide semiconductor devices; radiation hardness; reliability; Annealing; Capacitive sensors; Degradation; Hot carriers; Ionizing radiation; MONOS devices; Stress; Substrates; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.278518

Filename

278518