• DocumentCode
    1058874
  • Title

    Temperature dependence of gate forward turn-on voltage (Vf) of i-Al 0.3Ga0.7As/n-GaAs HIGFET´s

  • Author

    Futigami, Nobutaka ; Kawata, Yukihiro ; Takatani, Shinichiro ; Shigeta, Junji ; Miyazaki, Masaru

  • Author_Institution
    Hitachi VLSI Eng. Corp., Tokyo, Japan
  • Volume
    41
  • Issue
    4
  • fYear
    1994
  • fDate
    4/1/1994 12:00:00 AM
  • Firstpage
    614
  • Lastpage
    615
  • Abstract
    Forward gate current-voltage characteristics and their temperature dependence are investigated for i-Al0.3Ga0.7As/n-GaAs doped-channel HIGFET´s (DC-HIGFET´s) with the gate length of 0.3 μm. The temperature coefficient of the gate forward turn-on voltage (Vf) varies with the thickness (tU) of an i-AlGaAs layer, and shows a minimum value of -0.8~-0.9 mV/deg at tu=10 nm
  • Keywords
    III-V semiconductors; aluminium compounds; direct coupled FET logic; gallium arsenide; insulated gate field effect transistors; logic gates; 0.3 mum; Al0.3Ga0.7As-GaAs; DCFL inverter; GaAs; doped-channel HIGFET; forward gate current-voltage characteristics; gate forward turn-on voltage; gate length; i-Al0.3Ga0.7As/n-GaAs HIGFET; temperature coefficient; temperature dependence; Current-voltage characteristics; Doping; Electrodes; FETs; Gallium arsenide; MESFETs; OFDM modulation; Oxidation; Temperature dependence; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.278519
  • Filename
    278519
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1058874