Title :
Photonic Crystal Cavity With Double Heterostructure in GaN Bulk
Author :
Yu-Chieh Cheng ; Dong-Po Cai ; Chii-Chang Chen ; Chia-Hua Chan ; Chien-Chieh Lee ; Ya-Lun Tsai
Author_Institution :
Dept. of Opt. & Photonics, Nat. Central Univ., Jhongli, Taiwan
Abstract :
In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/ cm2 . The Q-factor of the cavity is measured to be as high as 104.
Keywords :
III-V semiconductors; Q-factor; gallium compounds; optical pumping; photonic crystals; wide band gap semiconductors; bulk materials; double heterostructure; high Q-factor; optical pumping; photonic crystal cavity; power 0.9 mW; power density; resonant mode; wavelength 362 nm; Cavity resonators; Gallium nitride; Laser excitation; Lattices; Photonic crystals; Photonics; Q-factor; GaN; Photonic Crystals; Q-factor; double heterostructure;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2013.2280343
