A three terminal InP/InGaAsP optoelectronic thyristor

Author

Buchwald, Walter R. ; Zhao, Jian H. ; Zhu, Longde ; Schauer, Stephen ; Jones, Kenneth A.

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA

Volume

41

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

620

Lastpage

622

Abstract

A three terminal light emitting opto-thyristor based on InP/InGaAsP heterostructures grown by liquid phase epitaxy (LPE) has been demonstrated. The opto-thyristor essentially combines the conventional PNPN thyristor and the NpN double heterostructure laser structure into a single PNpN device. Current-voltage characteristics confirm the thyristor type switching action with a maximum gate controllable breakover voltage of 8 V. Substantially increased light output at wavelengths of 1.3 and 0.93 μm is observed upon switching. The optical output as a function of device voltage is also reported

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; semiconductor lasers; semiconductor switches; thyristors; 0.93 mum; 1.3 mum; 8 V; InP-InGaAsP; InP/InGaAsP heterostructures; NpN double heterostructure laser structure; PNPN thyristor; PNpN device; current-voltage characteristics; light output; liquid phase epitaxy; maximum gate controllable breakover voltage; optical output-device voltage characteristics; optoelectronic thyristor; spontaneous emission; three terminal light emitting opto-thyristor; thyristor type switching action; Doping; Indium phosphide; MOS devices; MOSFETs; Physics; Silicon carbide; Substrates; Temperature; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.278522

Filename

278522