DocumentCode :
1059036
Title :
Transverse diffusion in planar transistors
Author :
Bhat, K.N. ; Achuthan, M.K.
Author_Institution :
Indian Institute of Technology, Madras, India
Volume :
25
Issue :
1
fYear :
1978
fDate :
1/1/1978 12:00:00 AM
Firstpage :
57
Lastpage :
60
Abstract :
The possibility of existence of a transverse diffusion current of minority carriers to the base contact in planar transistors is demonstrated using an electrolytic tank analog. The magnitude of this current is compared with the axial recombination current and the minority carrier current injected into the emitter.
Keywords :
Charge carrier processes; Contacts; Doping; Electron emission; Equations; Impurities; Photonic band gap; Silicon; Spontaneous emission; Temperature dependence;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19032
Filename :
1479426
Link To Document :
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