• DocumentCode
    1059051
  • Title

    A simple analytical model for estimating DC α of lateral p-n-p transistors

  • Author

    Ram, G.V. ; Tyagi, M.S.

  • Author_Institution
    Indian Institute of Technology, Kanpur, India
  • Volume
    25
  • Issue
    1
  • fYear
    1978
  • fDate
    1/1/1978 12:00:00 AM
  • Firstpage
    62
  • Lastpage
    64
  • Abstract
    A quasi-one-dimensional model which can estimate dc α of lateral (p-n-p) transistors fairly accurately is proposed. Variation of α with epilayer thickness and electric field in the buried layer is investigated. Results obtained are in good agreement with the two-dimensional analysis.
  • Keywords
    Analytical models; Electron emission; Equations; Frequency response; Geometry; Integrated circuit modeling; Materials science and technology; Niobium; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19034
  • Filename
    1479428
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1059051