Title :
Quantized dissipation of the quantum Hall effect at high currents
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
Quantized dissipative voltage states are observed when large currents are passed through a high-quality quantized Hall resistance device. These dissipative states are interpreted as occurring when electrons are excited to higher Landau levels and then return to the original Landau level. The author shows that the quantization is more complicated than previously thought. For example, the quantization can be a function of magnetic field. Therefore, the dissipative voltage quantization can, in general, be difficult to verify and determine
Keywords :
Landau levels; quantum Hall effect; GaAs-AlxGa1-xAs; Landau levels; dissipative voltage quantization; quantised dissipative voltage; quantized Hall resistance device; quantum Hall effect; Breakdown voltage; Electric breakdown; Electrons; Hall effect; Helium; Magnetic fields; NIST; Probes; Quantization; Temperature;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on