DocumentCode :
1059113
Title :
Quantized dissipation of the quantum Hall effect at high currents
Author :
Cage, Marvin E.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Volume :
42
Issue :
2
fYear :
1993
fDate :
4/1/1993 12:00:00 AM
Firstpage :
176
Lastpage :
178
Abstract :
Quantized dissipative voltage states are observed when large currents are passed through a high-quality quantized Hall resistance device. These dissipative states are interpreted as occurring when electrons are excited to higher Landau levels and then return to the original Landau level. The author shows that the quantization is more complicated than previously thought. For example, the quantization can be a function of magnetic field. Therefore, the dissipative voltage quantization can, in general, be difficult to verify and determine
Keywords :
Landau levels; quantum Hall effect; GaAs-AlxGa1-xAs; Landau levels; dissipative voltage quantization; quantised dissipative voltage; quantized Hall resistance device; quantum Hall effect; Breakdown voltage; Electric breakdown; Electrons; Hall effect; Helium; Magnetic fields; NIST; Probes; Quantization; Temperature;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/19.278544
Filename :
278544
Link To Document :
بازگشت