Determination of carrier-induced optical index and loss variations in GaInAsP/InP heterostructures from static and dynamic Mach-Zehnder interferometer measurements

Author

Zegaoui, M. ; Harari, J. ; Vilcot, J.P. ; Mollot, F. ; Decoster, D. ; Li, H.-W. ; Chazelas, J.

Author_Institution

Inst. d´´Electronique, Univ. des Sci. et Technol. de Lille, Villeneuve d´´Ascq, France

Volume

40

Issue

16

fYear

2004

Firstpage

1019

Lastpage

1020

Abstract

Mach-Zehnder type interferometer measurements are used to determine the variation of the optical index and propagation loss. Devices are fabricated in InGaAsP/InP material line and experiments are performed at 1.3 and 1.55 μm wavelength. Combining static and dynamic measurements, the carrier life-time, the effective index and loss variation against injected current and carrier density were determined.

Keywords

III-V semiconductors; Mach-Zehnder interferometers; carrier density; carrier lifetime; gallium arsenide; indium compounds; optical losses; refractive index; semiconductor heterojunctions; 1.3 micron; 1.55 micron; GaInAsP-InP; GaInAsP-lnP heterostructures; InGaAsP-InP material; carrier density; carrier induced optical index; carrier lifetime; dynamic Mach-Zehnder interferometer measurement; injected current; optical propagation loss; static Mach-Zehnder interferometer measurement;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20045539

Filename

1322818